BSM100GB60DLC IGBT electronic components datasheet pfd and price or inventory

 

Part #: BSM100GB60DLC
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 130A, 600V, N-CHANNEL IGBT
Mfr Package Description MODULE-7
REACH Compliant Yes
EU RoHS Compliant Yes
China RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 130 A
Collector-emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 445 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 180 ns
Turn-on Time-Nom (ton) 37 ns
VCEsat-Max 2.45 V

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BSM10GD120DN2 IGBT electronic components datasheet pfd and price or inventory

 

Part #: BSM10GD120DN2
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 15A, 1200V, N-CHANNEL IGBT
Mfr Package Description ECONOPACK-17
Status Transferred
Case Connection ISOLATED
Collector Current-Max (IC) 15 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 80 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 460 ns
Turn-on Time-Nom (ton) 105 ns
VCEsat-Max 3.2 V

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MG75Q2YS1 IGBT electronic components datasheet pfd and price or inventory

 

Part #: MG75Q2YS1
Part Category: Transistors
Manufacturer: Toshiba America, Inc.
Description: 75A, 1200V, N-CHANNEL IGBT
Status Discontinued
Collector Current-Max (IC) 75 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
JESD-30 Code R-PUFM-X7
Number of Elements 2
Number of Terminals 7
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 4 V
Additional Feature HIGH SPEED

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FS30R06XL4 IGBT electronic components datasheet pfd and price or inventory

 

Part #: FS30R06XL4
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 35A, 600V, N-CHANNEL IGBT
Mfr Package Description MODULE-16
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 35 A
Collector-emitter Voltage-Max 600 V
Configuration COMPLEX
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X16
Number of Elements 6
Number of Terminals 16
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 119 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 135 ns
Turn-on Time-Nom (ton) 29 ns
VCEsat-Max 2.55 V

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SEMIX302GB128DS IGBT electronic components datasheet pfd and price or inventory

 

Part #: SEMIX302GB128DS
Part Category: Transistors
Manufacturer: Semikron, Inc.
Description: 310A, 1200V, N-CHANNEL IGBT
Mfr Package Description CASE SEMIX 2S, 15 PIN
EU RoHS Compliant Yes
Status Discontinued
Case Connection ISOLATED
Collector Current-Max (IC) 310 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X15
JESD-609 Code e3/e4
Number of Elements 2
Number of Terminals 15
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN/SILVER
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 522 ns
Turn-on Time-Nom (ton) 239 ns

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FP40R12KT3 IGBT electronic components datasheet pfd and price or inventory

 

Part #: FP40R12KT3
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 55A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-24
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 55 A
Collector-emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X24
Number of Elements 7
Number of Terminals 24
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 210 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 140 ns
VCEsat-Max 2.3 V

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MG50Q1BS11 IGBT electronic components datasheet pfd and price or inventory

 

Part #: MG50Q1BS11
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 50A, 1200V, N-CHANNEL IGBT
Mfr Package Description 2-33D2A, 3 PIN
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 1000 ns
Gate-emitter Thr Voltage-Max 6 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 300 W
Power Dissipation-Max (Abs) 300 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1200 ns
Turn-on Time-Nom (ton) 400 ns
VCEsat-Max 2.7 V
Additional Feature HIGH SPEED

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BSM25GD120DN2E3224 IGBT electronic components datasheet pfd and price or inventory

 

Part #: BSM25GD120DN2E3224
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 35A, 1200V, N-CHANNEL IGBT
Mfr Package Description ECONOPACK-17
Status Transferred
Case Connection ISOLATED
Collector Current-Max (IC) 35 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X17
Number of Elements 6
Number of Terminals 17
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450 ns
Turn-on Time-Nom (ton) 140 ns
VCEsat-Max 3.2 V

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FZ600R12KS4 IGBT electronic components datasheet pfd and price or inventory

 

Part #: FZ600R12KS4
Part Category: Transistors
Manufacturer: Infineon Technologies AG
Description: 700A, 1200V, N-CHANNEL IGBT
Mfr Package Description MODULE-5
REACH Compliant Yes
EU RoHS Compliant Yes
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 700 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3900 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 590 ns
Turn-on Time-Nom (ton) 180 ns
VCEsat-Max 3.75 V

Get quote for FZ600R12KS4 IGBT electronic components or similar parts, click the below link to our web and submit RFQ, even the parts can not find at our web, our salesman also will find it and response you in 24 hours.

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MG75Q2YS40 IGBT electronic components datasheet pfd and price or inventory

 

Part #: MG75Q2YS40
Part Category: Transistors
Manufacturer: Toshiba America Electronic Components, Inc.
Description: 75A, 1200V, N-CHANNEL IGBT
Mfr Package Description 2-94D1A, 7 PIN
Status Active
Case Connection ISOLATED
Collector Current-Max (IC) 75 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-emitter Thr Voltage-Max 6 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 560 W
Power Dissipation-Max (Abs) 560 W
Qualification Status Not Qualified
Rise Time-Max (tr) 600 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 4 V
Additional Feature HIGH SPEED

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